On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• , and graphene is already in use as a transparent and flexible conductor. However, graphene intrinsically lacks a strong response, and only by engineering defects, such as grain boundaries, one can induce piezoresistivity. Nanocrystalline graphene (NCG), a derivative form of graphene, exhibits a high

• values. For larger strains, mechanisms such as grain rotation and the formation of nanocracks might contribute to the piezoresistive behavior in nanocrystalline graphene. Keywords: grain boundary; nanocrystalline graphene; strain sensor; Raman; tunneling and destruction; Introduction Flexible strain

• the order of a few micrometers [11]. We speculated that if grain boundaries are responsible for piezoresistivity in graphene, then the gauge factor should be enhanced if one reduces the grain size to a few nanometers. Nanocrystalline graphene (NCG) is graphitic material with a crystal size of

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• nanocrystalline graphene upon heating [25]. It was observed that this comes with a loss of atoms, which is also apparent in this experiment by the decreasing membrane thickness (see Figure 7a). The results from both methods, XPS and EFTEM, confirm the thickness measurement by STIM. While XPS and STIM are close

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• microfabrication process to configure the NEM switch, posing challenges for large-scale production. To facilitate the fabrication of graphene-based devices, direct growth of nanocrystalline graphene on insulating substrates using regular thin film process techniques (example of growth process is shown in Figure

•  10b) has been reported [27]. The nanocrystalline graphene on insulator had a very low thickness, good uniformity, and a Young’s modulus comparable to mechanically exfoliated graphene [27]. Both single-crystalline and nanocrystalline graphene are promising for commercial integration in high-performance